Principal Engineer
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Job Description
Job Summary
Principal Engineer, GaN Device Engineer, in charge of development of Gallium Nitride (GaN) power devices for high-efficiency power conversion. The candidate will possess expertise in GaN device design & physics to drive high performance/robustness technology. In addition, have an in-depth understanding of trapping mechanisms and relevant characterization techniques with hands-on experience. With strong communication skills in cross-functional teams to drive development path
Key Responsibilities
• · Drive technical understanding of GaN device physics, charge trapping mechanisms, and device reliability behavior.
• · Define and evaluate new device architectures to improve performance, robustness, and competitive differentiation.
• · Technical leadership in advanced device characterization, data analysis, and root-cause investigation to drive performance/ yield/ reliability improvement
• · Collaborate with cross-functional teams to guide technology development and accelerate commercialization of GaN products.
Requirements
Function: Manufacturing
Experience Level: Mid-Senior Level