GaN Technology Development Engineer at Renesas Electronics | Job-Scouts.com

GaN Technology Development Engineer

Renesas Electronics
full-time mid Hitachinaka, Ibaraki, Japan · More jobs in Hitachinaka, Ibaraki, Japan
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Job Description

We are seeking GaN Device Technology Engineer to drive next-generation high-efficiency power conversion technologies for emerging applications. In this role, you will participate throughout the full technology and product development cycle, from device concept and architecture development through technology qualification and product launch.

Responsible for developing advanced GaN device structures and driving technology development through electrical characterization and data-driven analysis. A major focus will be the design and implementation of PCM (Process Control Monitor) test structures, troubleshooting process and device-related issues through PCM data analysis, and performing hands-on electrical testing to debug and resolve technical challenges.

You will leverage a broad range of semiconductor test equipment and develop new characterization methodologies to investigate device dynamic behavior. The ideal candidate combines deep device physics knowledge with laboratory expertise, practical problem-solving skills. Working closely with device design, process integration, reliability, test, and product engineering teams, you will accelerate learning cycles and advance technology readiness for high-volume manufacturing.

 

A key responsibility of this role is to serve as a technical contributor in

(1) hand-on device characterization and testing,

(2) root-cause investigation,

(3) PCM structure design and analysis and

(4) technology troubleshooting.

This is a high-visibility position offering the opportunity to make significant technical and business contributions while helping shape the future of GaN power semiconductor innovation.

Requirements

Function: Engineering
Experience Level: Mid-Senior Level

Required Skills

Location

Hitachinaka, Ibaraki, Japan
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