GaN Technology Development Engineer at Renesas Electronics | Job-Scouts.com

GaN Technology Development Engineer

Renesas Electronics
full-time mid Hitachinaka, Ibaraki, Japan · More jobs in Hitachinaka, Ibaraki, Japan
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Job Description

We are seeking GaN Technology Development Engineer to drive next-generation high-efficiency power conversion technologies for emerging applications. In this role, you will participate throughout the full technology and product development cycle, from device concept and architecture development through technology qualification and product launch. Responsible for developing advanced GaN device structures and driving technology development through electrical characterization and data-driven analysis. A major focus will be the technology development including, transistor geometry design, process integration, troubleshooting for process and device-related issues through data analysis, and performing electrical testing to debug and resolve technical challenges.

You will also work on new characterization methodologies to investigate device dynamic behavior. The ideal candidate combines device physics knowledge with laboratory testing environment, practical problem-solving skills. Coordinating works across multiple functional teams, including TCAD simulation, process development, reliability test, and product engineering, you will accelerate learning cycles and advance technology readiness for high-volume manufacturing.

A key responsibility of this role is to serve as a technical contributor in  

(1) Device & PCM test structure design

(2) Process Integration

(3) hand-on device characterization and testing for technical trouble shooting.

This is a high-visibility position offering the opportunity to make significant technical and business contributions while helping shape the future of GaN power semiconductor innovation

Requirements

Function: Engineering
Experience Level: Mid-Senior Level

Location

Hitachinaka, Ibaraki, Japan
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